Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autor: Römer, Christian |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2024 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Analysis of the mobility behavior of MOS2 2D FETs |
| Autors: Cerdeira, A; Estrada, M; Mounir, A; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights |
| Autors: Dersch, N; Perez, E; Wenger, C; Roemer, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model |
| Autors: Dersch, N; Perez, E; Wenger, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Physical Compact Model for Source-Gated Transistors for DC Application |
| Autors: Golec, P; Bestelink, E; Sporea, RA; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact I-V Model for Double-Gated MoS2 FETs Including Short-Channel Effects |
| Autors: Mounir, A; Lime, F; Kloes, A; Provias, A; Knobloch, T; O'Brien, KP; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Improving electrical performance and fringe effect in p-type SnO x thin film transistors via Ta incorporation |
| Autors: Song, Y; Guo, RT; Hong, RH; He, R; Zou, XM; Iñiguez, B; Flandre, D; Liao, L; Li, GL |
| Any: 2025 Clau: Article |
| Revista: Journal Of Semiconductors |
| País: N/D |
| Títol: A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach |
| Autors: Teka ET; Yoon Y; Teuerle L; Meier T; Kleemann H; Darbandy G; Iniguez B |
| Any: 2025 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A Direct Method for Series Resistance Extraction in Organic Thin-Film Transistors |
| Autors: Zaibi, A; Kadura, L; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink, E; Galderisi, G; Golec, P; Han, Y; Iniguez, B; Kloes, A; Knoch, J; Matsui, H; Mikolajick, T; Niang, KM; Richstein, B; Schwarz, M; Sistani, M; Sporea, RA; Trommer, J; Weber, WM; Zhao, QT; Calvet, LE |
| Any: 2024 Clau: Review |
| Revista: Nano Futures |
| País: N/D |
| Títol: DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS |
| Autors: Broche, A; Cerdeira, A; Iñiguez, B; Estrada, M |
| Any: 2024 Clau: Article |
| Revista: Facta Universitatis (Nis), Series: Electronics And Energetics |
| País: N/D |
| Títol: Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design |
| Autors: Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: High-Frequency fT and fmax in Organic Transistors: Performance and Perspective |
| Autors: Darbandy, G; Pashaki, ER; Roemer, C; Bonil, A; Wang, J; Iniguez, B; Kleemann, H; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling |
| Autors: Lime, F; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Gaussian DOS Charge-Based DC Compact Modeling of High-Speed Organic Transistors |
| Autors: Pashaki, ER; Leise, J; Iniguez, B; Kleemann, H; Kloes, A; Darbandy, G |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Llibres / Books |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Capítols de Llibre / Book chapters |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Patents Sol.licitades / Patents |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Congressos / Conferences |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
| Autor/a: IÑIGUEZ NICOLAU, BENJAMIN |
| Títol: Numerical Exploration of Spiking Neuron Circuits in Organic Potft Technology |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2021 |
