Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autor: Römer, Christian |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2024 |
| País: N/D |
| Títol: Compact Modeling of Variability in Organic Thin-Film Transistors |
| Autor: Nikolaou, Aristeidis |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2023 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Jakob Leise |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Jakob Pruefer |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Leise, Jakob Simon |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Prüfer, Jakob Markus |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact modeling of intrinsic capacitances in double-gate tunnel-fets |
| Autor: Atieh Farokhnejad |
| Director: Lime, François Gilbert Marie (Autor O Coautor) ; Benjamín Iñiguez Nicolau; François Lime; Alexander Gunther Klös |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in Organic and IGZO TFTs |
| Autor: Cortes Ordoñez, Harold |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Compact Modeling of Intrinsic Capacitances in Double-Gate Tunnel-FETs |
| Autor: Farokhnejad, Atieh |
| Director: Iñiguez Nicolau, Benjamin; Lime, François Gilbert Marie |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in organic and igzo tfts |
| Autor: Harold Cortés Ordóñez |
| Director: Benjamín Iñiguez Nicolau |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink, Eva; Galderisi, Giulio; Golec, Patryk; Han, Yi; Iniguez, Benjamin; Kloes, Alexander; Knoch, Joachim; Matsui, Hiroyuki; Mikolajick, Thomas; Niang, Kham M; Richstein, Benjamin; Schwarz, Mike; Sistani, Masiar; Sporea, Radu A; Trommer, Jens; Weber, Walter M; Zhao, Qing-Tai; Calvet, Laurie E |
| Any: 2024 Clau: Review |
| Revista: Nano Futures |
| País: N/D |
| Títol: DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS |
| Autors: Broche, Anisleidy; Cerdeira, Antonio; Iniguez, Benjamin; Estrada, Magali |
| Any: 2024 Clau: Article |
| Revista: Facta Universitatis (Nis), Series: Electronics And Energetics |
| País: N/D |
| Títol: A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling |
| Autors: Lime, F; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, Ahmed; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; Knobloch, Theresia; Grasser, Tibor |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Gaussian DOS Charge-Based DC Compact Modeling of High-Speed Organic Transistors |
| Autors: Pashaki, Elahe Rastegar; Leise, Jakob; Iniguez, Benjamin; Kleemann, Hans; Kloes, Alexander; Darbandy, Ghader |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes, Alexander; Leise, Jakob; Pruefer, Jakob; Nikolaou, Aristeidis; Iniguez, Benjamin; Gneiting, Thomas; Klauk, Hagen; Darbandy, Ghader |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch, Malte; Tseng, Hsin; Weissbach, Anton; Iniguez, Benjamin; Leo, Karl; Kloes, Alexander; Kleemann, Hans; Darbandy, Ghader |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact I-V model for back-gated and double-gated TMD FETs |
| Autors: Mounir, Ahmed; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; Knobloch, Theresia; Grasser, Tibor |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects |
| Autors: Nikolaou A; Leise J; Zschieschang U; Klauk H; Gneiting T; Darbandy G; Iñiguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Organic Electronics |
| País: N/D |
| Títol: Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures |
| Autors: Roemer C; Dersch N; Darbandy G; Schwarz M; Han Y; Zhao QT; Iñíguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: The Schottky barrier transistor in emerging electronic devices |
| Autors: Schwarz M; Vethaak TD; Derycke V; Francheteau A; Iniguez B; Kataria S; Kloes A; Lefloch F; Lemme M; Snyder JP; Weber WM; Calvet LE |
| Any: 2023 Clau: Review |
| Revista: Nanotechnology |
| País: N/D |
| Títol: Electrical Evolution of p-Type SnO<inline-formula> <tex-math notation=LaTeX>$_{\textit{x}}$</tex-math> </inline-formula> Film and Transistor Deposited by RF Magnetron Sputtering |
| Autors: Zhou, Yuyan; Song, Yu; Hong, Ruohao; Liu, Xingqiang; Zou, Xuming; Iniguez, Benjamin; Flandre, Denis; Li, Guoli; Liao, Lei |
| Any: 2023 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel |
| Autors: He, Penghui; Ding, Chunchun; Zou, Xuming; Li, Guoli; Hu, Wei; Ma, Chao; Flandre, Denis; Iniguez, Benjamin; Liao, Lei; Lan, Linfeng; Liu, Xingqiang; |
| Any: 2022 Clau: Article |
| Revista: Applied Physics Letters |
| País: N/D |
| Títol: Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors |
| Autors: He, Penghui; Hong, Ruohao; Li, Guoli; Zou, Xuming; Hu, Wei; Lan, Linfeng; Iniguez, Benjamin; Liao, Lei; Liu, Xingqiang |
| Any: 2022 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Borchert, James W; Klauk, Hagen; Darbandy, Ghader; Nikolaou, Aristeidis; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autors: Roemer, Christian; Darbandy, Ghader; Schwarz, Mike; Trommer, Jens; Heinzig, Andre; Mikolajick, Thomas; Weber, Walter M; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The 2021 flexible and printed electronics roadmap |
| Autors: Bonnassieux Y; Brabec CJ; Cao Y; Carmichael TB; Chabinyc ML; Cheng KT; Cho G; Chung A; Cobb CL; Distler A; Egelhaaf HJ; Grau G; Guo X; Haghiashtiani G; Huang TC; Hussain MM; Iniguez B; Lee TM; Li L; Ma Y; Ma D; McAlpine MC; Ng TN; Österbacka R; Patel SN; Peng J; Peng H; Rivnay J; Shao L; Steingart D; Street RA; Subramanian V; Torsi L; Wu Y |
| Any: 2021 Clau: Review |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Analytical I-V and C-V models for symmetric double-gate AOSTFTs |
| Autors: Hernandez-Barrios, Y.; Estrada, M.; Pashkovich, A.; Muhea, W. E.; Iniguez, B.; Cerdeira, A.; |
| Any: 2021 Clau: Article |
| Revista: Semiconductor Science And Technology |
| País: N/D |
| Títol: Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM) |
| Autors: Hernandez-Barrios, Y; Gaspar-Angeles, J N; Estrada, M; Iniguez, B; Cerdeira, A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC |
| Autors: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M |
| Any: 2021 Clau: Article |
| Revista: Journal Of Integrated Circuits And Systems |
| País: N/D |
| Títol: New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs |
| Autors: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li, Guoli; Fan, Zizheng; Andre, Nicolas; Xu, Yongye; Xia, Ying; Iniguez, Benjamin; Liao, Lei; Flandre, Denis |
| Any: 2021 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances |
| Autors: Lime, Francois; Cerdeira, Antonio; Estrada, Magali; Pashkovich, Andrei; Iniguez, Benjamin |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Noise-Based Simulation Technique for Circuit-Variability Analysis |
| Autors: Nikolaou, Aristeidis; Leise, Jakob; Pruefer, Jakob; Zschieschang, Ute; Klauk, Hagen; Darbandy, Ghader; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K |
| Autors: Cortes-Ordonez, Harold; Haddad, C; Mescot, Xavier; Romanjek, Krunoslav; Ghibaudo, Gerard; Estrada, Magali; Cerdeira, Antonio; Iniguez, Benjamin |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Analytical current-voltage model for double-gate a-IGZO TFTs with symmetric structure for above threshold |
| Autors: Hernandez-Barrios Y; Cerdeira A; Estrada M; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Seifaei, Masoud; Manoli, Yiannos; Klauk, Hagen; Zschieschang, Ute; Iniguez, Benjamin; Kloes, Alexander; |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits including Nonquasistatic Effects |
| Autors: Leise, Jakob; Pruefer, Jakob; Nikolaou, Aristeidis; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs |
| Autors: Muhea WE; Castillo GU; Ordonez HC; Gneiting T; Ghibaudo G; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated-Mobility Fluctuation |
| Autors: Nikolaou, Aristeidis; Darbandy, Ghader; Leise, Jakob; Pruefer, Jakob; Borchert, James W; Geiger, Michael; Klauk, Hagen; Iniguez, Benjamin; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Klauk, Hagen; Borchert, James W; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement |
| Autors: Yilmaz, Kerim; Darbandy, Ghader; Reimbold, Gilles; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Llibres / Books |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Capítols de Llibre / Book chapters |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Patents Sol.licitades / Patents |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Congressos / Conferences |
| 2020 | 2021 | 2022 | 2023 | 2024 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
| Autor/a: IÑIGUEZ NICOLAU, BENJAMIN |
| Títol: Numerical Exploration of Spiking Neuron Circuits in Organic Potft Technology |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2021 |
