Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autor: Römer, Christian |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2024 |
| País: N/D |
| Títol: Compact Modeling of Variability in Organic Thin-Film Transistors |
| Autor: Nikolaou, Aristeidis |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2023 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Leise, Jakob Simon |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Prüfer, Jakob Markus |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Analysis of the mobility behavior of MOS2 2D FETs |
| Autors: Cerdeira, A; Estrada, M; Mounir, A; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights |
| Autors: Dersch, N; Perez, E; Wenger, C; Roemer, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model |
| Autors: Dersch, N; Perez, E; Wenger, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Physical Compact Model for Source-Gated Transistors for DC Application |
| Autors: Golec, P; Bestelink, E; Sporea, RA; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact I-V Model for Double-Gated MoS2 FETs Including Short-Channel Effects |
| Autors: Mounir, A; Lime, F; Kloes, A; Provias, A; Knobloch, T; O'Brien, KP; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Improving electrical performance and fringe effect in p-type SnO x thin film transistors via Ta incorporation |
| Autors: Song, Y; Guo, RT; Hong, RH; He, R; Zou, XM; Iñiguez, B; Flandre, D; Liao, L; Li, GL |
| Any: 2025 Clau: Article |
| Revista: Journal Of Semiconductors |
| País: N/D |
| Títol: A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach |
| Autors: Teka ET; Yoon Y; Teuerle L; Meier T; Kleemann H; Darbandy G; Iniguez B |
| Any: 2025 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A Direct Method for Series Resistance Extraction in Organic Thin-Film Transistors |
| Autors: Zaibi, A; Kadura, L; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink, E; Galderisi, G; Golec, P; Han, Y; Iniguez, B; Kloes, A; Knoch, J; Matsui, H; Mikolajick, T; Niang, KM; Richstein, B; Schwarz, M; Sistani, M; Sporea, RA; Trommer, J; Weber, WM; Zhao, QT; Calvet, LE |
| Any: 2024 Clau: Review |
| Revista: Nano Futures |
| País: N/D |
| Títol: DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS |
| Autors: Broche, A; Cerdeira, A; Iñiguez, B; Estrada, M |
| Any: 2024 Clau: Article |
| Revista: Facta Universitatis (Nis), Series: Electronics And Energetics |
| País: N/D |
| Títol: Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design |
| Autors: Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: High-Frequency fT and fmax in Organic Transistors: Performance and Perspective |
| Autors: Darbandy, G; Pashaki, ER; Roemer, C; Bonil, A; Wang, J; Iniguez, B; Kleemann, H; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling |
| Autors: Lime, F; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Gaussian DOS Charge-Based DC Compact Modeling of High-Speed Organic Transistors |
| Autors: Pashaki, ER; Leise, J; Iniguez, B; Kleemann, H; Kloes, A; Darbandy, G |
| Any: 2024 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: A Unified Physics-Based Model for analyzing Hysteresis in Organic Thin Film Transistors |
| Autors: Zaibi A; Abdelmoneam AM; Golec P; Estrada M; Cerdeira A; Kadura L; Calvet LE; Iniguez B |
| Any: 2024 Clau: Article |
| Revista: Ieee Journal On Flexible Electronics |
| País: N/D |
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes, A; Leise, J; Pruefer, J; Nikolaou, A; Iñíguez, B; Gneiting, T; Klauk, H; Darbandy, G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch, M; Tseng, H; Weissbach, A; Iniguez, B; Leo, K; Kloes, A; Kleemann, H; Darbandy, G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact I-V model for back-gated and double-gated TMD FETs |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects |
| Autors: Nikolaou, A; Leise, J; Zschieschang, U; Klauk, H; Gneiting, T; Darbandy, G; Iñiguez, B; Kloes, A |
| Any: 2023 Clau: Article |
| Revista: Organic Electronics |
| País: N/D |
| Títol: Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iñíguez, B; Kloes, A |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: The Schottky barrier transistor in emerging electronic devices |
| Autors: Schwarz, M; Vethaak, TD; Derycke, V; Francheteau, A; Iniguez, B; Kataria, S; Kloes, A; Lefloch, F; Lemme, M; Snyder, JP; Weber, WM; Calvet, LE |
| Any: 2023 Clau: Review |
| Revista: Nanotechnology |
| País: N/D |
| Títol: Electrical Evolution of p-Type SnO<inline-formula> <tex-math notation=LaTeX>$_{\textit{x}}$</tex-math> </inline-formula> Film and Transistor Deposited by RF Magnetron Sputtering |
| Autors: Zhou, YY; Song, Y; Hong, RH; Liu, XQ; Zou, XM; Iniguez, B; Flandre, D; Li, GL; Liao, L |
| Any: 2023 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel |
| Autors: He, PH; Ding, CC; Zou, XM; Li, GL; Hu, W; Ma, C; Flandre, D; Iniguez, B; Liao, L; Lan, LF; Liu, XQ |
| Any: 2022 Clau: Article |
| Revista: Applied Physics Letters |
| País: N/D |
| Títol: Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors |
| Autors: He, PH; Hong, RH; Li, GL; Zou, XM; Hu, W; Lan, LF; Iniguez, B; Liao, L; Liu, XQ |
| Any: 2022 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors |
| Autors: Pruefer, J; Leise, J; Borchert, JW; Klauk, H; Darbandy, G; Nikolaou, A; Iñíguez, B; Gneiting, T; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autors: Roemer, C; Darbandy, G; Schwarz, M; Trommer, J; Heinzig, A; Mikolajick, T; Weber, WM; Iniguez, B; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs |
| Autors: Yilmaz, K; Iñíguez, B; Lime, F; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform |
| Autors: Yilmaz, K; Iñíguez, B; Lime, F; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The 2021 flexible and printed electronics roadmap |
| Autors: Bonnassieux, Y; Brabec, CJ; Cao, Y; Carmichael, TB; Chabinyc, ML; Cheng, KT; Cho, G; Chung, A; Cobb, CL; Distler, A; Egelhaaf, HJ; Grau, G; Guo, XJ; Haghiashtiani, G; Huang, TC; Hussain, MM; Iniguez, B; Lee, TM; Li, L; Ma, YG; Ma, DG; McAlpine, MC; Ng, TN; Österbacka, R; Patel, SN; Peng, JB; Peng, HS; Rivnay, J; Shao, LL; Steingart, D; Street, RA; Subramanian, V; Torsi, L; Wu, YY |
| Any: 2021 Clau: Review |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Analytical I-V and C-V models for symmetric double-gate AOSTFTs |
| Autors: Hernandez-Barrios, Y; Estrada, M; Pashkovich, A; Muhea, WE; Iñiguez, B; Cerdeira, A |
| Any: 2021 Clau: Article |
| Revista: Semiconductor Science And Technology |
| País: N/D |
| Títol: Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC |
| Autors: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M |
| Any: 2021 Clau: Article |
| Revista: Journal Of Integrated Circuits And Systems |
| País: N/D |
| Títol: Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM) |
| Autors: Hernández-Barrios, Y; Gaspar-Angeles, JN; Estrada, M; Iñiguez, B; Cerdeira, A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs |
| Autors: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, J; Pruefer, J; Darbandy, G; Nikolaou, A; Giorgio, M; Caironi, M; Zschieschang, U; Klauk, H; Kloes, A; Iñiguez, B; Borchert, JW |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li, GL; Fan, ZZ; André, N; Xu, YY; Xia, Y; Iñíguez, B; Liao, L; Flandre, D |
| Any: 2021 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances |
| Autors: Lime, F; Cerdeira, A; Estrada, M; Pashkovich, A; Iñiguez, B |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Noise-Based Simulation Technique for Circuit-Variability Analysis |
| Autors: Nikolaou, A; Leise, J; Pruefer, J; Zschieschang, U; Klauk, H; Darbandy, G; Iñiguez, B; Kloes, A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, J; Leise, J; Nikolaou, A; Borchert, JW; Darbandy, G; Klauk, H; Iniguez, B; Gneiting, T; Kloes, A |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Llibres / Books |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Capítols de Llibre / Book chapters |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Patents Sol.licitades / Patents |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Congressos / Conferences |
| 2021 | 2022 | 2023 | 2024 | 2025 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
| Autor/a: IÑIGUEZ NICOLAU, BENJAMIN |
| Títol: Numerical Exploration of Spiking Neuron Circuits in Organic Potft Technology |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2021 |
