Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Títol: Compact Modeling for 2D Field Effect Transistors |
| Autor: Abdelmoneam, Ahmed Mounir Hamed Ahmed |
| Director: Iñiguez Nicolau, Benjamin; Lime, François Gilbert Marie |
| Universitat: N/D |
| Any: 2026 |
| País: N/D |
| Títol: Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autor: Römer, Christian |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2024 |
| País: N/D |
| Títol: Compact Modeling of Variability in Organic Thin-Film Transistors |
| Autor: Nikolaou, Aristeidis |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2023 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Leise, Jakob Simon |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Prüfer, Jakob Markus |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Títol: Exploring variability and quantization effects in artificial neural networks the MNIST dataset |
| Autors: Blumenstein, A; Pérez, E; Wenger, C; Dersch, N; Kloes, A; Iñiguez, B; Schwarz, M |
| Any: 2026 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: Review of DC and AC core compact models and device performance in organic transistors |
| Autors: Dutta, Monideepa; Ranjan Das, Nikhil; Iniguez, Benjamin; Kloes, Alexander; Darbandy, Ghader |
| Any: 2026 Clau: Review |
| Revista: JOURNAL OF APPLIED PHYSICS |
| País: N/D |
| Títol: Organic Neuromorphic Circuits for Real-Time Biosignal Applications |
| Autors: El-Nakouzi S; Kim G; Kim Y; Li Z; Hemmati A; Golec P; Zaibi A; Bonnassieux Y; Benwadih M; Iniguez B; Kadura L; Calvet LE |
| Any: 2026 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: Lead-Free Bismuth Halide Perovskite Memristors: Low-Voltage Switching and Physical Modeling of Resistive Hysteresis |
| Autors: Kim, So-Yeon; Rivera-Sierra, Gonzalo; Mengesha, Bitania Shiferaw; Iniguez, Benjamin; Bisquert, Juan |
| Any: 2026 Clau: Article |
| Revista: Advanced Materials Technologies |
| País: N/D |
| Títol: Analysis of the mobility behavior of MOS2 2D FETs |
| Autors: Cerdeira, A; Estrada, M; Mounir, A; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights |
| Autors: Dersch, N; Perez, E; Wenger, C; Roemer, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model |
| Autors: Dersch, N; Perez, E; Wenger, C; Schwarz, M; Iniguez, B; Kloes, A |
| Any: 2025 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: Physical Compact Model for Source-Gated Transistors for DC Application |
| Autors: Golec, P; Bestelink, E; Sporea, RA; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Compact I-V Model for Double-Gated MoS2 FETs Including Short-Channel Effects |
| Autors: Mounir, A; Lime, F; Kloes, A; Provias, A; Knobloch, T; O'Brien, KP; Grasser, T; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Improving electrical performance and fringe effect in p-type SnO x thin film transistors via Ta incorporation |
| Autors: Song, Y; Guo, RT; Hong, RH; He, R; Zou, XM; Iñiguez, B; Flandre, D; Liao, L; Li, GL |
| Any: 2025 Clau: Article |
| Revista: Journal of Semiconductors |
| País: N/D |
| Títol: A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach |
| Autors: Teka ET; Yoon Y; Teuerle L; Meier T; Kleemann H; Darbandy G; Iniguez B |
| Any: 2025 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A Direct Method for Series Resistance Extraction in Organic Thin-Film Transistors |
| Autors: Zaibi, A; Kadura, L; Iñiguez, B |
| Any: 2025 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Roadmap for Schottky barrier transistors |
| Autors: Bestelink, E; Galderisi, G; Golec, P; Han, Y; Iniguez, B; Kloes, A; Knoch, J; Matsui, H; Mikolajick, T; Niang, KM; Richstein, B; Schwarz, M; Sistani, M; Sporea, RA; Trommer, J; Weber, WM; Zhao, QT; Calvet, LE |
| Any: 2024 Clau: Review |
| Revista: NANO FUTURES |
| País: N/D |
| Títol: DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS |
| Autors: Broche, A; Cerdeira, A; Iñiguez, B; Estrada, M |
| Any: 2024 Clau: Article |
| Revista: Facta Universitatis (NIS), Series: Electronics and Energetics |
| País: N/D |
| Títol: Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design |
| Autors: Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: High-Frequency fT and fmax in Organic Transistors: Performance and Perspective |
| Autors: Darbandy, G; Pashaki, ER; Roemer, C; Bonil, A; Wang, J; Iniguez, B; Kleemann, H; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: Advanced Electronic Materials |
| País: N/D |
| Títol: A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling |
| Autors: Lime, F; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: JOURNAL OF APPLIED PHYSICS |
| País: N/D |
| Títol: Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2024 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Gaussian DOS Charge-Based DC Compact Modeling of High-Speed Organic Transistors |
| Autors: Pashaki, ER; Leise, J; Iniguez, B; Kleemann, H; Kloes, A; Darbandy, G |
| Any: 2024 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Physics-based compact current model for Schottky barrier transistors at deep cryogenic temperatures including band tail effects and quantum oscillations |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iniguez, B; Kloes, A |
| Any: 2024 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: A Unified Physics-Based Model for analyzing Hysteresis in Organic Thin Film Transistors |
| Autors: Zaibi A; Abdelmoneam AM; Golec P; Estrada M; Cerdeira A; Kadura L; Calvet LE; Iniguez B |
| Any: 2024 Clau: Article |
| Revista: IEEE Journal on Flexible Electronics |
| País: N/D |
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes, A; Leise, J; Pruefer, J; Nikolaou, A; Iñíguez, B; Gneiting, T; Klauk, H; Darbandy, G |
| Any: 2023 Clau: Article |
| Revista: IEEE Journal of the Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch, M; Tseng, H; Weissbach, A; Iniguez, B; Leo, K; Kloes, A; Kleemann, H; Darbandy, G |
| Any: 2023 Clau: Article |
| Revista: IEEE Journal of the Electron Devices Society |
| País: N/D |
| Títol: Compact I-V model for back-gated and double-gated TMD FETs |
| Autors: Mounir, A; Iñiguez, B; Lime, F; Kloes, A; Knobloch, T; Grasser, T |
| Any: 2023 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects |
| Autors: Nikolaou, A; Leise, J; Zschieschang, U; Klauk, H; Gneiting, T; Darbandy, G; Iñiguez, B; Kloes, A |
| Any: 2023 Clau: Article |
| Revista: ORGANIC ELECTRONICS |
| País: N/D |
| Títol: Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures |
| Autors: Roemer, C; Dersch, N; Darbandy, G; Schwarz, M; Han, Y; Zhao, QT; Iñíguez, B; Kloes, A |
| Any: 2023 Clau: Article |
| Revista: SOLID-STATE ELECTRONICS |
| País: N/D |
| Títol: The Schottky barrier transistor in emerging electronic devices |
| Autors: Schwarz, M; Vethaak, TD; Derycke, V; Francheteau, A; Iniguez, B; Kataria, S; Kloes, A; Lefloch, F; Lemme, M; Snyder, JP; Weber, WM; Calvet, LE |
| Any: 2023 Clau: Review |
| Revista: NANOTECHNOLOGY |
| País: N/D |
| Títol: Electrical Evolution of p-Type SnO<inline-formula> <tex-math notation=LaTeX>$_{\textit{x}}$</tex-math> </inline-formula> Film and Transistor Deposited by RF Magnetron Sputtering |
| Autors: Zhou, YY; Song, Y; Hong, RH; Liu, XQ; Zou, XM; Iniguez, B; Flandre, D; Li, GL; Liao, L |
| Any: 2023 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel |
| Autors: He, PH; Ding, CC; Zou, XM; Li, GL; Hu, W; Ma, C; Flandre, D; Iniguez, B; Liao, L; Lan, LF; Liu, XQ |
| Any: 2022 Clau: Article |
| Revista: APPLIED PHYSICS LETTERS |
| País: N/D |
| Títol: Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors |
| Autors: He, PH; Hong, RH; Li, GL; Zou, XM; Hu, W; Lan, LF; Iniguez, B; Liao, L; Liu, XQ |
| Any: 2022 Clau: Article |
| Revista: IEEE ELECTRON DEVICE LETTERS |
| País: N/D |
| Títol: Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors |
| Autors: Pruefer, J; Leise, J; Borchert, JW; Klauk, H; Darbandy, G; Nikolaou, A; Iñíguez, B; Gneiting, T; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autors: Roemer, C; Darbandy, G; Schwarz, M; Trommer, J; Heinzig, A; Mikolajick, T; Weber, WM; Iniguez, B; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: IEEE Journal of the Electron Devices Society |
| País: N/D |
| Títol: Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs |
| Autors: Yilmaz, K; Iñíguez, B; Lime, F; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Títol: Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform |
| Autors: Yilmaz, K; Iñíguez, B; Lime, F; Kloes, A |
| Any: 2022 Clau: Article |
| Revista: IEEE TRANSACTIONS ON ELECTRON DEVICES |
| País: N/D |
| Llibres / Books |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Capítols de Llibre / Book chapters |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Patents Sol.licitades / Patents |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Congressos / Conferences |
| 2022 | 2023 | 2024 | 2025 | 2026 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
