Resultats - Iñiguez Nicolau, Benjamin
Iñiguez Nicolau, Benjamin
| Tesis Doctorals Dirigides / Theses |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Títol: Compact Modeling of Variability in Organic Thin-Film Transistors |
| Autor: Nikolaou, Aristeidis |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2023 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Jakob Leise |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Prüfer, Jakob Markus |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors |
| Autor: Jakob Pruefer |
| Director: Alexander Kloes; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in Organic Thin-Film Transistors |
| Autor: Leise, Jakob Simon |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2022 |
| País: N/D |
| Títol: Compact Modeling of Intrinsic Capacitances in Double-Gate Tunnel-FETs |
| Autor: Farokhnejad, Atieh |
| Director: Iñiguez Nicolau, Benjamin; Lime, François Gilbert Marie |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Compact modeling of intrinsic capacitances in double-gate tunnel-fets |
| Autor: Atieh Farokhnejad |
| Director: Lime, François Gilbert Marie (Autor O Coautor) ; Benjamín Iñiguez Nicolau; François Lime; Alexander Gunther Klös |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in Organic and IGZO TFTs |
| Autor: Cortes Ordoñez, Harold |
| Director: Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Physical behaviour analysis and compact temperature-dependent modeling in organic and igzo tfts |
| Autor: Harold Cortés Ordóñez |
| Director: Benjamín Iñiguez Nicolau |
| Universitat: N/D |
| Any: 2020 |
| País: N/D |
| Títol: Characterization and compact modeling of flicker noise and piezoelectric effect in advanced field effect transistors |
| Autor: Wondwosen Eshetu Muhea |
| Director: Benjamín Iñiguez Nicolau |
| Universitat: N/D |
| Any: 2019 |
| País: N/D |
| Títol: Characterization and Compact Modeling of Flicker Noise and Piezoelectric Effect in Advanced Field Effect Transistors |
| Autor: Wondwosen Eshetu Muhea |
| Director: Lime, François Gilbert Marie; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2019 |
| País: N/D |
| Títol: Compact DC modeling of Tunnel-FETs |
| Autor: Horst, Fabian |
| Director: Boada Grau, Joan; Sora Miana, Beatriz; Iñiguez Nicolau, Benjamin |
| Universitat: N/D |
| Any: 2019 |
| País: N/D |
| Títol: Compact dc modeling of tunnel-fets |
| Autor: Fabian Horst |
| Director: Benjamín Iñiguez Nicolau (Director); Alexander Gunther Klös |
| Universitat: N/D |
| Any: 2019 |
| País: N/D |
| Publicacions en Revista / Papers |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Títol: THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors |
| Autors: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Device Physics, Modeling and Simulation of Organic Electrochemical Transistors |
| Autors: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G |
| Any: 2023 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects |
| Autors: Nikolaou A; Leise J; Zschieschang U; Klauk H; Gneiting T; Darbandy G; Iñiguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Organic Electronics |
| País: N/D |
| Títol: Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures |
| Autors: Roemer C; Dersch N; Darbandy G; Schwarz M; Han Y; Zhao QT; Iñíguez B; Kloes A |
| Any: 2023 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Electrical Evolution of p-Type SnO<inline-formula> <tex-math notation=LaTeX>$_{\textit{x}}$</tex-math> </inline-formula> Film and Transistor Deposited by RF Magnetron Sputtering |
| Autors: Zhou, YY; Song, Y; Hong, RH; Liu, XQ; Zou, XM; Iniguez, B; Flandre, D; Li, GL; Liao, L |
| Any: 2023 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Effect of Humidity on Properties of Aqueous-processed Tb-Doped Indium Oxide Thin-Film Transistors |
| Autors: He P; Hong R; Li G; Zou X; Hu W; Lan L; Iniguez B; Liao L; Liu X |
| Any: 2022 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel |
| Autors: He, Penghui; Ding, Chunchun; Zou, Xuming; Li, Guoli; Hu, Wei; Ma, Chao; Flandre, Denis; Iniguez, Benjamin; Liao, Lei; Lan, Linfeng; Liu, Xingqiang; |
| Any: 2022 Clau: Article |
| Revista: Applied Physics Letters |
| País: N/D |
| Títol: Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors |
| Autors: Pruefer J; Leise J; Borchert JW; Klauk H; Darbandy G; Nikolaou A; Iniguez B; Gneiting T; Kloes A |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors |
| Autors: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A |
| Any: 2022 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform |
| Autors: Yilmaz, Kerim; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; |
| Any: 2022 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The 2021 flexible and printed electronics roadmap |
| Autors: Bonnassieux Y; Brabec CJ; Cao Y; Carmichael TB; Chabinyc ML; Cheng KT; Cho G; Chung A; Cobb CL; Distler A; Egelhaaf HJ; Grau G; Guo X; Haghiashtiani G; Huang TC; Hussain MM; Iniguez B; Lee TM; Li L; Ma Y; Ma D; McAlpine MC; Ng TN; Österbacka R; Patel SN; Peng J; Peng H; Rivnay J; Shao L; Steingart D; Street RA; Subramanian V; Torsi L; Wu Y |
| Any: 2021 Clau: Review |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM) |
| Autors: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Analytical I-V and C-V models for symmetric double-gate AOSTFTs |
| Autors: Hernandez-Barrios, Y.; Estrada, M.; Pashkovich, A.; Muhea, W. E.; Iniguez, B.; Cerdeira, A.; |
| Any: 2021 Clau: Article |
| Revista: Semiconductor Science And Technology |
| País: N/D |
| Títol: Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC |
| Autors: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M |
| Any: 2021 Clau: Article |
| Revista: Journal Of Integrated Circuits And Systems |
| País: N/D |
| Títol: New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs |
| Autors: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed; |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, J.; Pruefer, J.; Darbandy, G.; Nikolaou, A.; Giorgio, M.; Caironi, M.,;Zschieschang, U.;Klauk, H.; Kloes, A.;Iñiguez, B.; Borchert, J. W |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W.; |
| Any: 2021 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li G; Fan Z; Andre N; Xu Y; Xia Y; Iniguez B; Liao L; Flandre D |
| Any: 2021 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances |
| Autors: Lime F; Cerdeira A; Estrada M; Pashkovich A; Iniguez B |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Noise-Based Simulation Technique for Circuit-Variability Analysis |
| Autors: Nikolaou A; Leise J; Pruefer J; Zschieschang U; Klauk H; Darbandy G; Iniguez B; Kloes A |
| Any: 2021 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors |
| Autors: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander; |
| Any: 2021 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: The flexible and printed electronics roadmap |
| Autors: Yvan Bonnassieux, Christoph J. Brabec, Yong Cao, Tricia Breen Carmichael, Michael L. Chabinyc, Kwang Ting Cheng, Gyoujin Cho, Anjung Chung, Corie L. Cobb, Andreas Distler, Hans Joachim Egelhaaf, Gerd Grau, Xiaojun Guo, Ghazaleh Haghiashtiani, Tsung Ching Huang, Muhammad M. Hussain, Benjamin Iniguez, Taik Min Lee, Ling Li, Yuguang Ma, Dongge Ma, Michael C. McAlpine, Tse Nga Ng, Ronald Österbacka*, Shrayesh N. Patel, Junbiao Peng, Huisheng Peng, Jonathan Rivnay, Leilai Shao, Daniel Steingart, Robert A. Street, Vivek Subramanian, Luisa Torsi, Yunyun Wu |
| Any: 2021 Clau: Article |
| Revista: Flexible And Printed Electronics |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K |
| Autors: Cortes-Ordonez, Harold; Haddad, C.; Mescot, Xavier; Romanjek, Krunoslav; Ghibaudo, Gerard; Estrada, Magali; Cerdeira, Antonio; Iniguez, Benjamin; |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Analytical current-voltage model for double-gate a-IGZO TFTs with symmetric structure for above threshold |
| Autors: Hernandez-Barrios Y; Cerdeira A; Estrada M; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Foreword Special Issue on Compact Modeling of Semiconductor Devices |
| Autors: Iniguez B; Chauhan YS; Mijalkovic S; Xia K; Goo JS; Pavanello M; Mierzwinski M; Grabinski W |
| Any: 2020 Clau: Editorial |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2020 Clau: Article |
| Revista: International Journal Of Reconfigurable And Embedded Systems |
| País: N/D |
| Títol: Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits including Nonquasistatic Effects |
| Autors: Leise J; Pruefer J; Nikolaou A; Darbandy G; Klauk H; Iniguez B; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs |
| Autors: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Seifaei, Masoud; Manoli, Yiannos; Klauk, Hagen; Zschieschang, Ute; Iniguez, Benjamin; Kloes, Alexander; |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors |
| Autors: Li G; Fan Z; Andre N; Xu Y; Xia Y; Iniguez B; Liao L; Flandre D |
| Any: 2020 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs |
| Autors: Muhea WE; Castillo GU; Ordonez HC; Gneiting T; Ghibaudo G; Iniguez B |
| Any: 2020 Clau: Article |
| Revista: Ieee Journal Of The Electron Devices Society |
| País: N/D |
| Títol: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated-Mobility Fluctuation |
| Autors: Nikolaou A; Darbandy G; Leise J; Pruefer J; Borchert JW; Geiger M; Klauk H; Iniguez B; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors |
| Autors: Pruefer J; Leise J; Darbandy G; Nikolaou A; Klauk H; Borchert JW; Iniguez B; Gneiting T; Kloes A |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement |
| Autors: Yilmaz, Kerim; Darbandy, Ghader; Reimbold, Gilles; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander; |
| Any: 2020 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures |
| Autors: Cerdeira A, Estrada M, Hernandez-Barrios Y, Hernandez I, Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors |
| Autors: Cortes-Ordonez H, Jacob S, Mohamed F, Ghibaudo G, Iniguez B |
| Any: 2019 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts |
| Autors: Farokhnejad A, Schwarz M, Horst F, Iñíguez B, Lime F, Kloes A |
| Any: 2019 Clau: Article |
| Revista: Solid-State Electronics |
| País: N/D |
| Títol: Features of the Nonlinear Harmonic Distortion in AOSTFTs |
| Autors: Hernandez-Barrios, Y.; Cerdeira, A.; Tinoco, J.; Iniguez, B.; |
| Any: 2019 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: 2D Physics Based Compact DC Modeling of DG Tunnel FETs |
| Autors: Horst F, Farokhnejad A, Zhao Q, Iniguez B, Kloes A |
| Any: 2019 Clau: Article |
| Revista: Ieee Transactions On Electron Devices |
| País: N/D |
| Títol: An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: International Journal Of Electronics Letters |
| País: N/D |
| Títol: An analytical drain current model for dual-material gate graded-channel and dual-oxide thickness cylindrical gate (DMG-GC-DOT) MOSFET |
| Autors: Jaafar H; Aouaj A; Bouziane A; Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Nanoscience And Nanotechnology - Asia |
| País: N/D |
| Títol: A Complete Charge-Based Capacitance Model for IGZO TFTs |
| Autors: Moldovan O, Castro-Carranza A, Estrada M, Cerdeira A, Lime F, Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Ieee Electron Device Letters |
| País: N/D |
| Títol: ¿Current-Voltage and Flicker noise analysis and unified modeling for amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Etch Stop Layer from 298 to 333 K |
| Autors: Muhea W, Gneiting T, Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Journal Of Applied Physics |
| País: N/D |
| Títol: 1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric |
| Autors: Muhea W, Romanjek K, Mescot X, Theodorou C, Charbonneau M, Mohamed F, Ghibaudo G, Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Applied Physics Letters |
| País: N/D |
| Títol: AlxGaN1-x/AlN/GaN and DH-AlxGaN1-X/GaN HEMTs Threshold Voltage Model |
| Autors: Muhea W; Kermas N; Yigletu F; Cabré R; Iñiguez B |
| Any: 2019 Clau: Article |
| Revista: Physica Status Solidi A-Applications And Materials Science |
| País: N/D |
| Llibres / Books |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Capítols de Llibre / Book chapters |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Títol: Flexible and Printed Electronics, in More than Moore Devices and Integration for Semiconductors |
| Autors: IÑIGUEZ NICOLAU, BENJAMIN |
| Any: 2023 Clau: Book Chapters |
| Títol: Flexible and Printed Electronics |
| Autors: Iñiguez B |
| Any: 2023 Clau: Book Chapters |
| Altres Documents / Other documents |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Patents Sol.licitades / Patents |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Congressos / Conferences |
| 2019 | 2020 | 2021 | 2022 | 2023 |
|---|
| Autor/a: [189] L. E. Calvet, P. Coulson, B. Iniguez, and K. Romanjek |
| Títol: Unified Charge Control Model for MoS2 FET |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2022 |
| Autor/a: IÑIGUEZ NICOLAU, BENJAMIN |
| Títol: Numerical Exploration of Spiking Neuron Circuits in Organic Potft Technology |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2021 |
| Autor/a: Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamin Iñíguez, Thomas Gneiting and Alexander Kloes |
| Títol: Analytical Model for VT,roll-off and DIBL Effect in Short Channel Staggered Organic Thin-Film Transistors |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2019 |
| Autor/a: Jakob Simon Leise, Jakob Prüfer, Ghader Darbandy, Masoud Seifaei, Yiannos Manoli, Hagen Klauk, Benjamin Iñíguez and Alexander Kloes |
| Títol: Verification of a Charge-Based Capacitance Model for Staggered Organic Thin-Film Transistors |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2019 |
| Autor/a: R. Grassi, I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, S. Chourou, M. Townsend, and A. Nejim |
| Títol: Simulation of CdSe Based Quantum Dot Hybrid Light Emitting Diodes Using Tcad Continuous Models |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2019 |
| Autor/a: W. E. Muhea, K. Romanjek, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo and B. Iñiguez |
| Títol: Low Frequency Noise (LFN) Characterization of High Mobility Polymeric OTFT devices |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2019 |
| Autor/a: [176] H. Cortes-Ordoñez, K. Romanjek, G. Ghibaudo, X. Mescot and B.Iñiguez |
| Títol: Analysis and parameter extraction in I-V characteristics in high mobility OTFTs from 150K to 350K |
| Congrés/acte: N/D |
| Congrés/acte: Speaker |
| Any: 2019 |
